DMBTA55 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for general purpose amplifier applications. pinning 1 = base 2 = emitter 3 = collector sot-23 dimensions in inches and (millimeters) .091(2.30).067(1.70) .063(1.60).055(1.40) .108(0.65).089(0.25) .045(1.15).034(0.85) .118(3.00) .110(2.80) .020(0.50).012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30).035(0.90) .026(0.65).010(0.25) max .027(0.67).013(0.32) 2 1 3 characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -60 - - v ic=-100ma collector-emitter breakdown voltage bvceo -60 - - v ic=-1ma emitter-base breakdown volatge bvebo -4 - - v ie=-100ma collector cutoff current icbo - - -100 na vcb =-60v iceo - - -100 na vce =-50v collector-emitter saturation voltage (1) vce(sat) - - -0.25 v ic=-100ma, ib=-10ma base-emitter on voltage vbe(on) - - -1.2 v ic=-100ma, vce=-1v dc current gain(1) hfe1 80 - 250 - ic=-10ma, vce=-1v hfe2 80 - - - ic=-100ma, vce=-1v transition frequency ft 50 - - mhz ic=-100ma, vce =-1v electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% characteristic symbol rating unit collector-base voltage vcbo -60 v collector-emitter voltage vceo -60 v emitter-base voltage vebo -4 v collector current ic -500 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc)
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